PART |
Description |
Maker |
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
HM62V256LFP-8ULT HM62V256LTM-8UL |
32,768-word x 8-bit low voltage operation CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
EM44CM1688LBB-3F EM44CM1688LBB-25F |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
EM47CM1688SBA-125 EM47CM1688SBA-150 EM47CM1688SBB |
JEDEC Standard VDD/VDDQ
|
Eorex Corporation
|
MT58L64L32F |
2Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through
|
MICRON
|
2SK3325 |
Low gate charge: QG = 22 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 10 A)
|
TY Semiconductor Co., Ltd
|
MT8806 |
8 x 4 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
2SK3322 |
Low gate charge QG = 15 nC TYP. (VDD = 450V, VGS = 10 V, ID = 5.5A)
|
TY Semiconductor Co., Ltd
|
MT8815 |
8 x 12 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
MT8808 |
8 x 8 Analog Switch Array with Low On-resistance, for (VDD - VEE) = 4.5 V to 13.2 V
|
Zarlink Semiconductor
|
MT8809 |
8 x 8 Analog Switch Array with Low On-resistance, for VDD = 4.5 V to 13.2 V, with Chip Select
|
Zarlink Semiconductor
|
ISL12020 ISL12020CBZ ISL12020IBZ |
Low Power RTC with VDD Battery Backed SRAM and Embedded Temp Compensation 【5ppm with Auto Day Light Saving
|
Intersil Corporation
|